Hours:
16 hours (4 credits)

Room:
Aula Riunioni del Dipartimento di Ingegneria dell'Informazione, Via G. Caruso 16, Pisa – Ground Floor

Short Abstract:
In this 16hrs course, Gallium-Nitride and advanced silicon technologies for power applications will be presented and described in details.
Particular emphasis will be given to the disruptive gallium-nitride technology that is currently one of the most promising technologies for future power and RF devices. The main advantages and features of GaN-on-Silicon field effect transistors will be presented during the course. Detailed explanations of the different device concepts and of the main fabrication processes will be given in the first part of the course; furthermore, the main roadblocks for a successful integration of GaN technology on conventional Silicon wafers will be described.
The second part of the course will focus more in details on the different characterization techniques specific to GaN technology and on the Infineon GaN Virtual prototyping approach for the device and system modeling.
Finally, an overview on the main applications for GaN devices will be presented.
The final day of the course will be focused on the overview of advanced silicon technologies for power applications. Both high-voltage and mid-to-low-voltage device concepts and technologies will be presented.

Course Contents in brief:

• GaN Power Technology:
• • GaN Fundamentals
  • Device Concepts: normally-on vs. normally-off
  • GaN-on-Silicon Epitaxial Growth and Device Fabrication
  • GaN power device characterization and modeling
  • GaN applications
• Advanced Silicon Technologies for Power applications:
  • Device Concepts
  • Applications

Schedule:

• Day1 – 29 giugno ore 9:00-13:00, 15:00 – 17:00, GaN Power Technology (Module I)
• Day2 – 30 giugno ore 9:00-13:00, 15:00 – 17:00, GaN Power Technology (Module II)
• Day3 – 1 luglio ore 9:00-13:00, Advanced Silicon Power Technologies