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Polito G., Cozzi C. and Barillaro G. (2017, 5). Controlling the Electrochemical Etching of Pores with High Aspect Ratio at the Submicrometer Scale In Silicon. ECS Transaction, 77, 259-265.

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The controlled electrochemical etching at high anodic voltage (up to 35 V) of two-dimensional arrays of ordered pores with sub-micrometric diameter (down to 800 nm) at high depths (up to 40 µm) and high density (spacing 1.8 µm), yielding a maximum aspect ratio of 50, using low-doped (resistivity 3-8 Ωcm) n-type silicon is hereby for the first time demonstrated and discussed.